High-mobility spin-cast organic thin film transistors

被引：88

作者：

Park, Sung Kyu ^{[1
,2
,3
]}

Mourey, Devin A. ^{[1
,2
,4
]}

Subramanian, Sankar ^{[5
]}

Anthony, John E. ^{[5
]}

Jackson, Thomas N. ^{[1
,2
,3
]}

机构：

[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[3] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[4] Penn State Univ, Dept Mat Sci Engn, University Pk, PA 16802 USA

[5] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2952769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report high- mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8- difluoro- 5,11- bis(triethylsilylethynyl) anthradithiophene (diF- TESADT). diF- TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm(2) / V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/ drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF- TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length. (c) 2008 American Institute of Physics.

引用

页数：3

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