Detection of pH variation using modified microcantilever sensors

被引:75
作者
Ji, HF [1 ]
Hansen, KM [1 ]
Hu, Z [1 ]
Thundat, T [1 ]
机构
[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
关键词
microcantilevers; pH; surface stress; microcantilever bending;
D O I
10.1016/S0925-4005(00)00678-X
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A micromechanical technique for measuring solution pH using modified silicon (SiO2) and silicon nitride (Si3N4) microcantilevers is described. As the modified surface of the cantilever accumulates charge proportional to the pH of the surrounding liquid, the cantilever undergoes bending due to the differential surface stress. Results are presented for chemically modified (4-aminobutyltriethoxysilane, 11-mercaptoundecanoic acid) and metal-modified (Au/Al) surfaces over a pH range 2-12. Aminosilane-modified SiO2/Au cantilevers performed robustly over pH range 2-8 (49 nm deflection/pH unit), while Si3N4/Au cantilevers performed well st pH 2-6 and 8-12 (30 nm deflection/pH unit). The influences of other ions on cantilever bending were found to be negligible below 10(-2) M concentration. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:233 / 238
页数:6
相关论文
共 21 条
[1]   FORMATION OF MONOLAYER FILMS BY THE SPONTANEOUS ASSEMBLY OF ORGANIC THIOLS FROM SOLUTION ONTO GOLD [J].
BAIN, CD ;
TROUGHTON, EB ;
TAO, YT ;
EVALL, J ;
WHITESIDES, GM ;
NUZZO, RG .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1989, 111 (01) :321-335
[2]  
Ballantine D.S., 1997, ACOUSTIC WAVE SENSOR
[3]   ANALYSIS OF THE THRESHOLD VOLTAGE AND ITS TEMPERATURE-DEPENDENCE IN ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (EISFETS) [J].
BARABASH, PR ;
COBBOLD, RSC ;
WLODARSKI, WB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) :1271-1282
[4]   A sensitive method to measure changes in the surface stress of solids [J].
Butt, HJ .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1996, 180 (01) :251-260
[5]   ADSORPTION-INDUCED SURFACE STRESS AND ITS EFFECTS ON RESONANCE FREQUENCY OF MICROCANTILEVERS [J].
CHEN, GY ;
THUNDAT, T ;
WACHTER, EA ;
WARMACK, RJ .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) :3618-3622
[6]   Binary monolayer mixtures: Modification of nanopores in silicon-supported tris(trimethylsiloxy)silyl monolayers [J].
Fadeev, AY ;
McCarthy, TJ .
LANGMUIR, 1999, 15 (21) :7238-7243
[7]   A GENERALIZED THEORY OF AN "ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].
FUNG, CD ;
CHEUNG, PW ;
KO, WH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :8-18
[8]   OBSERVATION OF A CHEMICAL-REACTION USING A MICROMECHANICAL SENSOR [J].
GIMZEWSKI, JK ;
GERBER, C ;
MEYER, E ;
SCHLITTLER, RR .
CHEMICAL PHYSICS LETTERS, 1994, 217 (5-6) :589-594
[9]   MODELING H+-SENSITIVE FETS WITH SPICE [J].
GRATTAROLA, M ;
MASSOBRIO, G ;
MARTINOIA, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :813-819
[10]   ION-SENSING DEVICES WITH SILICON-NITRIDE AND BOROSILICATE GLASS INSULATORS [J].
HARAME, DL ;
BOUSSE, LJ ;
SHOTT, JD ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1700-1707