Tunneling criteria and breakdown for low resistive magnetic tunnel junctions

被引:20
作者
Oliver, B [1 ]
He, Q [1 ]
Tang, XF [1 ]
Nowak, J [1 ]
机构
[1] Seagate Technol LLC, Bloomington, MN 55435 USA
关键词
D O I
10.1063/1.1590064
中图分类号
O59 [应用物理学];
学科分类号
摘要
The tunneling criteria are evaluated using magnetic tunnel junctions having ultrathin alumina barrier with and without pinholes. It is shown that the tunneling criteria formulated by Rowell [J. Appl. Phys. 41, 1915 (1970)] clearly do not rule out the presence of pinholes in an ultrathin insulating barrier. In particular, the third criterion, a downward temperature dependence of resistance, cannot be used to decisively rule out the presence of pinholes. Examination of the breakdown mechanism will reveal the true nature of the barrier quality, and thus should be applied alongside the tunneling criteria to identify tunneling and the presence of pinholes. (C) 2003 American Institute of Physics.
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页码:1783 / 1786
页数:4
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