Large surface-state conductivity in ultrathin Bi films

被引：85

作者：

Hirahara, T.

Matsuda, I.

Yamazaki, S.

Miyata, N.

Hasegawa, S.

Nagao, T.

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Natl Inst Mat Sci, Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2813613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ microscopic-four-point probe conductivity measurements were performed for ultrathin Bi films on Si(111)-7x7. From the extrapolation of thickness-dependent conductivity and decrease in conductivity through surface oxidization, we found clear evidence of large surface-state conductivity (sigma(SS)similar to 1.5x10(-3) Omega(-1)/square at room temperature) in Bi(001) films. For the thinnest films (similar to 25 A), the transport properties are dominated by the highly inert surface states that are Rashba spin-split, and this suggests the possibility of using these Bi surface states for spintronics device application. (c) 2007 American Institute of Physics.

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