Structural and magnetic properties of a Ga0.985Mn0.015N epilayer

被引：3

作者：

Giraud, R.

Kuroda, S.

Marcet, S.

Bellet-Amalric, E.

Biquard, X.

Barbara, B.

Fruchart, D.

Ferrand, D.

Cibert, J.

Mariette, H.

机构：

[1] Univ Grenoble 1, CNRS, CEA, Grp Nanophys & Semicond,Lab Spectrometrie Phys, F-38402 St Martin Dheres, France

[2] CEA Grenoble, DRFMC, SP2M, F-38054 Grenoble, France

[3] CNRS, Lab Magnetisme Louis Neel, F-38042 Grenoble, France

[4] CNRS, Cristallog Lab, F-38042 Grenoble, France

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷

关键词：

magnetic semiconductors; wide gap semiconductors; GaMnN; room-temperature ferromagnetism;

D O I：

10.1016/j.jmmm.2003.12.804

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently reported room-temperature ferromagnetism in Mn-doped GaN thick layers is still debated, due to the possible formation of magnetic precipitates. We investigated the structural and magnetic properties of Mn-doped GaN epilayers with a Mn content as large as 18%. Below about 2%, only the pure diluted phase Ga1-xMnxN is obtained. Similarly to the x similar to 1.5% case discussed here, all measurements reveal a dominant paramagnetic component at low temperature, superimposed to a small hysteresis one which is not specific to our epilayers. (C) 2003 Published by Elsevier B.V.

引用

页码：E1557 / E1558

页数：2

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