Improvement of Si/SiO2 mask etching selectivity in the new D-RIE process

被引：9

作者：

Ohara, J ^{[1
]}

Kano, K ^{[1
]}

Takeuchi, Y ^{[1
]}

Otsuka, Y ^{[1
]}

机构：

[1] DENSO Corp, Res Labs, Aichi 4700111, Japan

来源：

14TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2001年

关键词：

D O I：

10.1109/MEMSYS.2001.906482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes an improvement of Si/SiO2 mask etching selectivity in the new D-RIE process that we presented in MEMS 2000 [1]. This process, which repeats the conventional D-RTE (ASE process) and O-2 plasma irradiation processes alternately, can improve the aspect ratio due to the prevention of lateral etching. however, the SiO2 mask erosion of this process was 2.7 times as high as that of the conventional D-RIE process because the SiO2 mask is sputtered by oxygen ion in the O-2 plasma irradiation process. Therefore the highest aspect ratio:46 was restricted by mask consumption. In this study, we suppressed the SiO2 mask consumption. This suppression improves etching selectivity and increases the highest aspect ratio up to 60. Furthermore, the required process time is reduced to 2/3 of the prior result.

引用

页码：76 / 79

页数：2

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