Novel approach to atomic force lithography

被引：14

作者：

Hu, S ^{[1
]}

Altmeyer, S ^{[1
]}

Hamidi, A ^{[1
]}

Spangenberg, B ^{[1
]}

Kurz, H ^{[1
]}

机构：

[1] Inst Semicond Elect 2, D-52074 Aachen, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1116/1.590117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-layer resist system consisting of 3 nm titanium and 65 nm polymethylmethacrylate (PMMA) has been developed to expand the potential of mechanical atomic force microscope nanolithography. Approximately 20 nm wide structures have been grooved in an ultrathin Ti film. The realized Ti patterns were transferred into the PMMA bottom layer by an reactive ion etching (RIE) process in oxygen. Finally, 30 nm wide and 45 nm deep grooves, and arrays of holes with a period of 55 nm, which are 20-30 nm in diameter and 45 nm in depth, have been fabricated in silicon by a second RIE step in a SF6+O-2 gas mixture. (C) 1998 American Vacuum Society.

引用

页码：1983 / 1986

页数：4

共 22 条

[1]

ALTMEYER S, 1997, J APPL PHYS, V81, P8818

[2] Atomic force microscopy study of electron beam written contamination structures [J].