Optical study of germanium nanostructures grown on a Si(118) vicinal substrate

被引：19

作者：

Bremond, G

Serpentini, M

Souifi, A

Guillot, G

Jacquier, B

Abdallah, M

Berbezier, I

Joyce, B

机构：

[1] INSA, Phys Mat Lab, CNRS, UMR 5511, F-69661 Villeurbanne, France

[2] Univ Lyon 1, CNRS, UMR 5620, Lab Physicochim Mat Luminescents, F-69622 Villeurbanne, France

[3] CNRS, Ctr Rech Mecanismes Croissance Cristalline, F-13288 Marseille, France

[4] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England

来源：

MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 4-5期

关键词：

photoluminescence; germanium nanostructures; molecular beam epitaxy; high index surface; type-II recombination; luminescence;

D O I：

10.1016/S0026-2692(98)00135-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence (PL) measurements were carried out on Si/Ge(n)/Si0.7Ge0.3/Si structures (II is varying from 1 to 7 ML) deposed by gas source molecular beam epitaxy (GS-MBE) on Si(100) surfaces and high index Si(118) vicinal surfaces. Ge nanostructures were confined on the top of the undulation of the Si0.3Ge0.7 wetting layer, according to the Stranski-Krastanov growth mode. PL measurements reveal a correlation between the substrate orientation and the island morphology: square dots for (001) and wires for (118) surface orientation. The results suggest that the SiGe wetting layer is required to ensure a good dot size uniformity. The dependence of the luminescence on the excitation power and the PL decay time indicate that the luminescence transitions likely occur in a type-II band line up. Finally, the dot-related PL persists up to room temperature which is very promising for optoelectronic device applications. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：357 / 362

页数：6

共 15 条

[1] Self organization of Ge dots on Si substrates: influence of misorientation [J].