Defect spectra in epitaxial CuInSe2 grown by MOVPE

被引：31

作者：

Rega, N ^{[1
]}

Siebentritt, S ^{[1
]}

Beckers, IE ^{[1
]}

Beckmann, J ^{[1
]}

Albert, J ^{[1
]}

Lux-Steiner, M ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

CuInSe2; defects; photoluminescence; MOVPE;

D O I：

10.1016/S0040-6090(03)00188-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For investigations of the defect spectra of CuInSe2 epitaxial thin films are grown on GaAs (0 0 1) wafers using metal organic vapor phase epitaxy. The photoluminescence spectra for p-type Cu-rich ([Cu]/[In] >1.05) CuInSe2 are dominated by one donor acceptor pair transition at 0.972 eV. For slightly Cu-poor and stoichiometric samples a free to bound transition at 0.992 eV is observed. Also an exciton emission could be detected at E-FX = 1.032 eV indicating a bandgap of E-G = 1.038 eV at 10 K. These results can be combined in a defect model for CuInSe2 containing two acceptors states with 40 and 60 meV and a compensating 6 meV donor state. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：186 / 189

页数：4

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