MOVPE of epitaxial CuInSe2 on GaAs

被引：28

作者：

Rega, N ^{[1
]}

Siebentritt, S ^{[1
]}

Beckers, I ^{[1
]}

Beckmann, J ^{[1
]}

Albert, J ^{[1
]}

Lux-Steiner, M ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

defects; photoluminescence; metalorganic vapor phase epitaxy; CuInSe2; semiconducting ternary compounds; solar cells;

D O I：

10.1016/S0022-0248(02)01874-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial films of CuInSe2 are grown on GaAs (001) wafers using metalorganic vapor phase epitaxy in a horizontal reactor for fundamental optical and electrical transport investigations. In this article we present the growth parameters and structural properties of the epitaxial CuInSe2 thin film. The growth parameters are optimized. in particular growth temperature and gas floats. The optimum growth temperature for CuInSe2 is 500 degreesC with a growth rate of approximately 90 nm/h. At 450degreesC CuInSe2 exhibits some polycrystallinity within the otherwise single crystalline lacer. Attempts to grow CuInSe2 on GaAs at 570degreesC lead to Ga interdiffusion in the CuInSe2 layer. Layers with different [Cu]/[In] ratios are examined by photoluminescence to identify intrinsic defect levels. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 174

页数：6

共 17 条

[1] Radiative recombination via intrinsic defects in CuxGaySe2 [J].