Highly rectifying Au-contacts on diamond-on-silicon substrate

被引：7

作者：

Gluche, P

Wolter, SD

Borst, TH

Ebert, W

Vescan, A

Kohn, E

机构：

[1] Dept. of Electron Devices and Circt., University of Ulm

[2] Pennsylvania State University, Material Research Laboratory, University Park

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 06期

关键词：

D O I：

10.1109/55.496454

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au-Schottky diodes have been fabricated on highly oriented diamond (HOD) films, grown on silicon using ac-bias nucleation and microwave plasma chemical vapor deposition, The active layers were selectively grown and doped by solid boron source, Nigh rectification ratios were obtained up to 500 degrees C in a bias voltage range up to +/-15 V, A current density of more than 1 A/cm(2) and a breakdown field strength up to 2.0 . 10(6) V/cm for point contacts has been demonstrated.

引用

页码：270 / 272

页数：3

共 8 条

[1] ELECTRICAL CHARACTERIZATION OF HOMOEPITAXIAL DIAMOND FILMS DOPED WITH B, P, LI AND NA DURING CRYSTAL-GROWTH [J].