Temperature dependence of carrier lifetimes in InN

被引:26
作者
Chen, F [1 ]
Cartwright, AN
Lu, H
Schaff, WJ
机构
[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 05期
关键词
D O I
10.1002/pssa.200461501
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Time-resolved pump-probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10(18) to 10(19) cm(-3). The observed decay time at 20 K is well explained by a dominating radiative interband recombination, while at room temperature it is attributed to a defect related nonradiative recombination channel. The temperature dependence of the radiative lifetime is deduced from the measurements of both differential transmission decay time and PL intensity. For the best quality sample, we find the radiative lifetime increases proportionally to T-3/2, as theory predicts when a k-selection rule holds, which suggests that the radiative band-to-band transition accounts for the observed infrared photoluminescence over the entire temperature. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:768 / 772
页数:5
相关论文
共 16 条
  • [1] Temperature-dependent optical properties of wurtzite InN
    Chen, F
    Cartwright, AN
    Lu, H
    Schaff, WJ
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4) : 308 - 312
  • [2] Time-resolved spectroscopy of recombination and relaxation dynamics in InN
    Chen, F
    Cartwright, AN
    Lu, H
    Schaff, WJ
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (24) : 4984 - 4986
  • [3] Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO
  • [4] 2-O
  • [5] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS
    FELDMANN, J
    PETER, G
    GOBEL, EO
    DAWSON, P
    MOORE, K
    FOXON, C
    ELLIOTT, RJ
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (20) : 2337 - 2340
  • [6] Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
    Im, JS
    Moritz, A
    Steuber, F
    Harle, V
    Scholz, F
    Hangleiter, A
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (05) : 631 - 633
  • [7] Lash G., 1964, PHYS REV A, V133, P553
  • [8] Donor and acceptor concentrations in degenerate InN
    Look, DC
    Lu, H
    Schaff, WJ
    Jasinski, J
    Liliental-Weber, Z
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (02) : 258 - 260
  • [9] Improvement on epitaxial grown of InN by migration enhanced epitaxy
    Lu, H
    Schaff, WJ
    Hwang, J
    Wu, H
    Yeo, W
    Pharkya, A
    Eastman, LF
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2548 - 2550
  • [10] Lu H, 2003, MATER RES SOC SYMP P, V743, P317