CuInS2/In2S3 thin film solar cell using spray pyrolysis technique having 9.5% efficiency

被引:145
作者
John, TT
Mathew, M
Kartha, CS
Vijayakumar, KP [1 ]
Abe, T
Kashiwaba, Y
机构
[1] Cochin Univ Sci & Technol, Dept Phys, Thin Film Photovoltaic Div, Cochin 682022, Kerala, India
[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan
关键词
CuInS2; In2S3; solar cell; efficiency;
D O I
10.1016/j.solmat.2004.12.005
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Copper indium sulfide (CuInS2)/In2S3 solar cells were fabricated using spray pyrolysis method and high short circuit current density and moderate open circuit voltage were obtained by adjusting the condition of deposition and thickness of both the layers. Consequently, a relatively high efficiency of 9.5% (active area) was obtained without any anti-reflection coating. The cell structure was ITO/CuInS2/ln(2)S(3)/Ag. We avoided the usual cyanide etching and CdS buffer layer, both toxic, for the fabrication of the cell. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:27 / 36
页数:10
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