Electrode modification and interface engineering in organic light-emitting diodes

被引:14
作者
Hung, LS [1 ]
Lee, ST
机构
[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 85卷 / 2-3期
关键词
electrode modification; interface engineering; organic light-emitting diodes;
D O I
10.1016/S0921-5107(01)00539-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is well known that the use of a cathode consisting of a thin LiF layer and a thick Al overlayer (similar to 100 mn) produces an excellent electron-injecting contact for organic light-emitting diodes (OLEDs). We report in this paper that the contact is formed as a result of the chemical reaction involving LiF, Al, and Alq, and the reacted layer is of the order of 1 mn or less. The shallow contact nature allows for a much greater flexibility in the design of cathode structures and extending its applications to various device configurations. By using the shallow contact, an ITO-free surface emitting OLED was prepared and shown to have superior electrical and optical characteristics. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:104 / 108
页数:5
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