A proposal for maskless, zone-plate-array nanolithography

被引:66
作者
Smith, HI
机构
[1] Dept. of Elec. Eng. and Comp. Sci., Massachusetts Inst. of Technology, Cambridge
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期
关键词
D O I
10.1116/1.589044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a novel form of x-ray projection lithography that: (1) requires no mask, and hence can be considered an x-ray pattern generator; (2) is, in principle, capable of reaching the limits of the lithographic process. The new scheme utilizes an array of Fresnel zone plates, and matrix-addressed micromechanical shutters to turn individual x-ray beamlets on or off in response to commands from a control computer. Zone plate resolution is approximately equal to the minimum zone width. which can approach 10 nm. Zone plates are narrow-band lensing elements: For a diffraction limited focus, the source bandwidth Delta lambda/lambda should be less than or equal to the reciprocal of the number of zones N. An undulator having N-u magnetic sections emits collimated radiation in a bandwidth Delta lambda/lambda = 1/N-u. N-u is usually in the range 35-100. We present a system design based on 25 nm lithographic resolution using lambda = 4.5 nm. For N = 100 the zone-plate diameter is 10 mu m. Each zone plate of the array would be responsible only for exposure within its ''unit cell.'' To fill in a full pattern, the stage holding the sample would be scanned in X and Y while the beamlets are multiplexed on and off. A microundulator designed for installation on a commercial compact synchrotron can provide 87 mW within a 2% bandwidth around 4.5 nm in a divergence cone of 0.28 mrad. The calculated efficiency of first-order focus for a zone plate operating at 4.5 nm is 31%, using 130 nm of spent U as the absorber/phase shifter. An exposure rate of similar to 1 cm(2)/s at 25 nm resolution appears feasible. (C) 1996 American Vacuum Society.
引用
收藏
页码:4318 / 4322
页数:5
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