Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

被引：19

作者：

Kim, SJ ^{[1
]}

Cho, BJ

Li, MF

Zhu, CX

Chin, A

Kwong, DL

机构：

[1] Natl Univ Singapore, Silicon Nano Device Labs, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 07期

关键词：

capacitance density; co-sputtering; HfO2; lanthanide; metal-insulator-metal (MIM) capacitor; voltage coefficient of capacitor (VCC);

D O I：

10.1109/LED.2003.814024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/mum(2) with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.

引用

页码：442 / 444

页数：3

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