Silicon drift detector; Studies about geometry of electrodes and production technology

被引:47
作者
Beole, S
Bonvicini, V
Burger, P
Casse, G
Corsi, F
DeVenuto, D
Giubellino, P
Gramegna, G
Kolojvari, A
Manzari, V
Marzocca, C
Rashevsky, A
Riccati, L
Vinogradov, L
Vacchi, A
Zampa, N
机构
[1] UNIV TRIESTE,DIPARTIMENTO FIS,I-34127 TRIESTE,ITALY
[2] INFE,TRIESTE,ITALY
[3] ST PETERSBURG STATE UNIV,ST PETERSBURG 199034,RUSSIA
[4] POLITECN BARI,DIPARTIMENTO ELETTROTECN & ELETTRON,BARI,ITALY
[5] UNIV BARI,DIPARTIMENTO FIS,I-70121 BARI,ITALY
[6] IST NAZL FIS NUCL,I-70126 BARI,ITALY
[7] IST NAZL FIS NUCL,I-10125 TURIN,ITALY
[8] UNIV TURIN,DIPARTIMENTO FIS,I-10124 TURIN,ITALY
[9] CANBERRA SEMICOND NV,B-2250 OLEN,BELGIUM
关键词
D O I
10.1016/0168-9002(96)00201-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Having high spatial resolution and good energy response the silicon drift detector (SDD) finds specific applications in experimental physics. The aims of this project are: simplified detector production and operation, improved total-to-sensitive-area ratio and stable working conditions. We have started a systematic study which includes all elements of the device, the silicon wafer, the various electrodes, an improved technology and VLSI front-end electronics. Several prototypes have been produced and we are progressively testing them. We summarize here our program of work and present the results from the first drift structures tested.
引用
收藏
页码:393 / 396
页数:4
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