Refractive index patterns in silicon inverted colloidal photonic crystals

被引:56
作者
Tétreault, N [1 ]
Míguez, H [1 ]
Yang, SM [1 ]
Kitaev, V [1 ]
Ozin, GA [1 ]
机构
[1] Univ Toronto, Dept Chem, Mat Chem Res Grp, Toronto, ON M5S 3H6, Canada
关键词
D O I
10.1002/adma.200304429
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Spatially resolved laser micro-annealing (process shown on inside front cover) has been used to drive an amorphous to nanocrystalline phase transition in Si inverted colloidal photonic crystals to create micrometer-sized refractive index patterns (observed as the yellow color in the Figure). This provides a simple means of tailoring the optical properties of Si photonic crystals, and has applications in photonic crystal miniaturized optical components, devices, and circuits.
引用
收藏
页码:1167 / +
页数:7
相关论文
共 35 条
  • [1] Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors
    Angelis, CT
    Dimitriadis, CA
    Miyasaka, M
    Farmakis, FV
    Kamarinos, G
    Brini, J
    Stoemenos, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4600 - 4606
  • [2] Estimation of the optical constants and the thickness of thin films using unconstrained optimization
    Birgin, EG
    Chambouleyron, I
    Martínez, JM
    [J]. JOURNAL OF COMPUTATIONAL PHYSICS, 1999, 151 (02) : 862 - 880
  • [3] Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres
    Blanco, A
    Chomski, E
    Grabtchak, S
    Ibisate, M
    John, S
    Leonard, SW
    Lopez, C
    Meseguer, F
    Miguez, H
    Mondia, JP
    Ozin, GA
    Toader, O
    van Driel, HM
    [J]. NATURE, 2000, 405 (6785) : 437 - 440
  • [4] STUDY OF INITIAL DUST FORMATION IN AN AR-SIH4 DISCHARGE BY LASER-INDUCED PARTICLE EXPLOSIVE EVAPORATION
    BOUFENDI, L
    HERMANN, J
    BOUCHOULE, A
    DUBREUIL, B
    STOFFELS, E
    STOFFELS, WW
    DEGIORGI, ML
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 148 - 153
  • [5] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
  • [6] EXPERIMENTAL-DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION IN SILICON THIN-FILMS FROM RAMAN-SPECTROSCOPY
    BUSTARRET, E
    HACHICHA, MA
    BRUNEL, M
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1675 - 1677
  • [7] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
    CAMPBELL, IH
    FAUCHET, PM
    [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
  • [8] COMPARISON OF LOW-TEMPERATURE POLYSILICON CRYSTAL-GROWTH ON LOW-COST SUBSTRATES
    CZUBATYJ, W
    BEGLAU, D
    CHAO, BS
    GONZALEZHERNANDEZ, J
    PAWLIK, DA
    KLERSY, P
    JABLONSKI, D
    HIMMLER, R
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (02): : 294 - 298
  • [9] OPTICAL-PROPERTIES AND DAMAGE ANALYSIS OF GAAS SINGLE-CRYSTALS PARTLY AMORPHIZED BY ION-IMPLANTATION
    ERMAN, M
    THEETEN, JB
    CHAMBON, P
    KELSO, SM
    ASPNES, DE
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2664 - 2671
  • [10] RAMAN-SPECTROSCOPY OF LOW-DIMENSIONAL SEMICONDUCTORS
    FAUCHET, PM
    CAMPBELL, IH
    [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 : S79 - S101