Epitaxial growth of diamond on iridium

被引：138

作者：

Ohtsuka, K ^{[1
]}

Suzuki, K ^{[1
]}

Sawabe, A ^{[1
]}

Inuzuka, T ^{[1
]}

机构：

[1] TOPLAS CORP, CHICHIBU, SAITAMA 318, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 8B期

关键词：

diamond; epitaxy; epitaxial growth; chemical vapor deposition; direct current; iridium; pretreatment;

D O I：

10.1143/JJAP.35.L1072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of diamond on iridium thin films was performed by direct-current plasma chemical vapor deposition with ion irradiation pretreatment of the substrate. Pyramidal epitaxial diamond particles with a number density of similar to 10(8) cm(-2) were grown on the iridium film. The epitaxial relation is written as (100)(diamond)//(100)(iridium) and [001](diamond)//[001](iridium). Tilting of the epitaxial relation, as occasionally observed for diamond on silicon or beta silicon carbide, is scarcely observed. Erosion,as observed for diamond on nickel substrates, is not observed. The effect of the ion irradiation of the substrate is discussed briefly.

引用

页码：L1072 / L1074

页数：3

共 7 条

[1]

IKEO N, 1991, HDB XRAY PHOTOELECTR, P201

[2] EPITAXIAL-GROWTH OF DIAMOND THIN-FILMS ON CUBIC BORON NITRIDE(111) SURFACES BY DC PLASMA CHEMICAL VAPOR-DEPOSITION [J].