Quantum confinement in semiconductor Ge quantum dots

被引：42

作者：

Ren, SY

机构：

[1] Department of Physics, Peking University

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 102卷 / 06期

基金：

中国国家自然科学基金;

关键词：

nanostructures; semiconductors; electronic states (localized); optical properties;

D O I：

10.1016/S0038-1098(97)00001-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A theoretical investigation on how the band structure of bulk semiconductors specifically affects the quantum confinement in quantum dots is presented, using Ge as an example. The intrinsic difference of the quantum confinement of different symmetrical valence states may bring some completely new physics as the quantum dot size decreases. (C) 1997 Elsevier Science Ltd.

引用

页码：479 / 484

页数：6

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