Self-organized (In, Mn) as diluted magnetic semiconductor nanostructures on GaAs substrates

被引：15

作者：

Guo, SP ^{[1
]}

Ohno, H ^{[1
]}

Shen, A ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, Y ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Electron Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

基金：

日本学术振兴会;

关键词：

(In; Mn)As; diluted magnetic semiconductors; QDs; molecular beam epitaxy;

D O I：

10.1016/S0169-4332(98)00157-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have grown (In,Mn)As quantum dots (QDs) on GaAs (100), (211)B and (311)B substrates. The observation of reflection high energy electron diffraction pattern and atomic force microscopy measurement confirmed the formation of the (In,Mn)As QDs. The structure grown on GaAs (100) showed a broad range of dot sizes with irregular shape. For the structure grown on GaAs (311)B, (In,Mn)As QDs with bimodal size distribution were observed. The (In,Mn)As QDs grown on GaAs (211)B showed improved size uniformity compared to those grown on GaAs (100) and (311)B. The effect of Mn as a surfactant on InAs nanostructures was also studied. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：797 / 802

页数：6