Inhomogeneous pumping and increased filamentation threshold of semiconductor lasers by contact profiling

被引:17
作者
Skovgaard, PMW [1 ]
O'Brien, P
McInerney, JG
机构
[1] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland
[2] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
关键词
D O I
10.1049/el:19981349
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors have fabricated inhomogeneously pumped broad area diode lasers using a novel digitated electrical contact pad to smooth the edges of the transverse distribution of injected carriers. Experiments demonstrate the effectiveness of this scheme in increasing the filamentation threshold and reducing near field modulation up to 35 times threshold. The inhomogeneously pumped design has reduced threshold current and increased slope efficiency relative to a comparable standard broad area device.
引用
收藏
页码:1950 / 1951
页数:2
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