Index-guide GaInNAs laser diode for optical communications

被引：9

作者：

Nakatsuka, S

Kondow, M

Kitatani, T

Yazawa, Y

Okai, M

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

[2] Opt Interconnect Hitachi Lab, RWCP, Kokubunji, Tokyo 185, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

GalnNAs; AlGaAs/GaAs/GalnNAs; GalnAs/GaAs/AIGaAs; optical communication; real index-guide; temperature characteristics;

D O I：

10.1143/JJAP.37.1380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaAs/GaAs/GaInNAs single-quantum-well real-index-guide laser diode with a ridged waveguide structure was fabricated. A threshold current of 24 mA under room-temperature continuous-wave operation was attained with this structure. Obtained device parameters show that this device shows promise for application in optical communication system.

引用

页码：1380 / 1382

页数：3

共 4 条

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1804-1811

[4] In0.38Ga0.62As/InAlGaAs/InGaP strained double quantum well lasers on In0.21Ga0.79As ternary substrate [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (6B) :L778-L780

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