Fractal crystallization and nonlinear V-I behavior of Au/Ge bilayer film

被引：17

作者：

Chen, ZW ^{[1
]}

Zhang, SY

Tan, S

Hou, JG

Zhang, YH

Sekine, H

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China

[2] Teikyo Univ, Sch Sci & Engn, Dept Elect & Elect Syst Engn, Utsunomiya, Tochigi 320, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.1326851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fractal formation and V-I behavior of the Au/Ge bilayer film have been investigated with a transmission electron microscope and by the two-probe configuration method. The experimental results suggest that the Au/Ge bilayer film, after the fractal crystallization, shows a nonlinear V-I behavior. This phenomenon was explained by the random tunneling junction model. (C) 2001 American Institute of Physics.

引用

页码：783 / 785

页数：3

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