Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by RF magnetron sputtering

被引：5

作者：

Bae, C ^{[1
]}

Lee, JK ^{[1
]}

Lee, SH ^{[1
]}

Park, YB ^{[1
]}

Jung, HJ ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 136791, South Korea

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

ferroelectric; SrBi2Ta2O9; Sr deficiency; abnormal grain growth;

D O I：

10.1080/10584589808202082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With increasing sputtering pressure and post-annealing temperature, uniform rodlike grains were obtained through bimodal grain size distribution. But, (00l) peaks of SrBi2Ta2O9 thin films were increased. Improvement of electrical properties is expected by removing the abnormal grain growth and c-axis oriented SrBi2Ta2O9.

引用

页码：419 / 428

页数：10

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