Grain boundary electromigration in thin films: Interface Reaction and segregation effects

Grain boundary electromigration (EM) in microelectronic thin film interconnects and solute segregation effects are considered. Special attention is paid to the processes ("Interface Reactions") which precede and follow electro-diffusion stage and call control the overall EM rate, in particular in short conductors or narrow lines with near-bamboo structures. The anode reaction is recognized as Diffusional Creep with creep viscosity being the critical factor. The cathode reaction is seen as GB Grooving with surface diffusion critically involved. The selection criteria for the interface-active solutes "beneficial" in reaction controlled EM are discussed for the first time.