STRESS GENERATION BY ELECTROMIGRATION

被引：406

作者：

BLECH, IA ^{[1
]}

HERRING, C ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 03期

关键词：

D O I：

10.1063/1.89024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：131 / 133

页数：3

共 11 条

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BLECH, IA .

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[3]

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HERRING, C .

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[7]

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[8]

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[9] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].

MCCALDIN, JO ;

SANKUR, H .

APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&

[10] X-RAY EXTINCTION CONTRAST TOPOGRAPHY OF SILICON STRAINED BY THIN SURFACE FILMS [J].

MEIERAN, ES ;

BLECH, IA .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3162-&

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