Bottom electrode and barrier materials issues in stacked capacitor type ferroelectric memories

被引:7
作者
Norga, GJ [1 ]
Wouters, DJ [1 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
关键词
ferroelectric capacitor; diffusion barrier; orientation effects;
D O I
10.1080/10584580008215654
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A number of basic materials issues need to be solved to successfully realize the stacked ferroelectric capacitor cell concept, which is needed for FERAM with densities beyond about 1Mb. This paper discusses barrier materials selection and the role of bottom electrode microstructure for future PZT-based FERAM based on the stacked cell concept. Conventional methods for PZT texture control, employing Pt as a template layer, are less suited for stacked cell layouts, because of the poor diffusion barrier properties of Pt. Modification of the microstructure of RuO2 bottom electrodes has allowed us to eliminate the effect of underlying layers on the texture of PZT. The advantages of this approach in view of increasing circuit density of PZT-based FERAMs are discussed.
引用
收藏
页码:205 / 212
页数:8
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