Observation of huge nonlinear absorption enhancement near exciton resonance in GaN

被引：17

作者：

Lin, KH

Chern, GW

Huang, YC

Keller, S

DenBaars, SP

Sun, CK ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期

关键词：

D O I：

10.1063/1.1619218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Huge excitonic enhancement of two-photon absorption near the exciton-transition energy was observed in the GaN system. The peak value of the nonlinear absorption coefficient is at least 1500 cm/GW, corresponding to an enhancement factor of >100. The room temperature exciton dephasing time is also obtained based on a spectral analysis to be similar to150 fs in bulk GaN, which is close to the exciton ionization time. (C) 2003 American Institute of Physics.

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收藏

页码：3087 / 3089

页数：3

相关论文

共 23 条

[11] Quantum beats of free and bound excitons in GaN [J].

Kyhm, K ;

Taylor, RA ;

Ryan, JF ;

Aoki, T ;

Kuwata-Gonokami, M ;

Beaumont, B ;

Gibart, P .

APPLIED PHYSICS LETTERS, 2001, 79 (08) :1097-1099

[12] Theory of the ultrafast optical response of active semiconductor waveguides [J].

Mork, J ;

Mecozzi, A .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1996, 13 (08) :1803-1816

[13] EXCITONIC ENHANCEMENT OF 2-PHOTON ABSORPTION IN SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].

OBEIDAT, A ;

KHURGIN, J .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1995, 12 (07) :1222-1227

[14]

Pacebutas V, 2001, APPL PHYS LETT, V78, P4118, DOI 10.1063/1.1380248

[15] Femtosecond degenerate four-wave mixing of GaN on sapphire: Measurement of intrinsic exciton dephasing time [J].

Pau, S ;

Kuhl, J ;

Scholz, F ;

Haerle, V ;

Khan, MA ;

Sun, CJ .

PHYSICAL REVIEW B, 1997, 56 (20) :12718-12721

[16] Carrier-carrier scattering in the gain dynamics of InxGa1-xAs/AlyGa1-yAs diode lasers [J].

Sanders, GD ;

Sun, CK ;

Golubovic, B ;

Fujimoto, JG ;

Stanton, CJ .

PHYSICAL REVIEW B, 1996, 54 (11) :8005-8020

[17] DYNAMIC BURSTEIN SHIFT IN GAAS [J].

SHAH, J ;

LEHENY, RF ;

LIN, C .

SOLID STATE COMMUNICATIONS, 1976, 18 (08) :1035-1037

[18]

SHEN YR, 1984, PRINCIPLES NONLINEAR, pCH12

[19] Large near resonance third order nonlinearity in GaN [J].

Sun, CK ;

Huang, YL ;

Liang, JC ;

Wang, JC ;

Gan, KG ;

Kao, FJ ;

Keller, S ;

Mack, MP ;

Mishra, U ;

Denbaars, SP .

OPTICAL AND QUANTUM ELECTRONICS, 2000, 32 (4-5) :619-640

[20] Two-photon absorption study of GaN [J].

Sun, CK ;

Liang, JC ;

Wang, JC ;

Kao, FJ ;

Keller, S ;

Mack, MP ;

Mishra, U ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :439-441