Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene

被引：133

作者：

Sanchez-Yamagishi, Javier D. ^{[1
]}

Taychatanapat, Thiti ^{[2
]}

Watanabe, Kenji ^{[3
]}

Taniguchi, Takashi ^{[3
]}

Yacoby, Amir ^{[2
]}

Jarillo-Herrero, Pablo ^{[1
]}

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 06期

关键词：

DIRAC FERMIONS; BERRYS PHASE;

D O I：

10.1103/PhysRevLett.108.076601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate electronic transport in dual-gated twisted-bilayer graphene. Despite the subnanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite interlayer screening and extract the capacitance between the atomically spaced layers. At zero filling factor, we observe an insulating state at large displacement fields, which can be explained by the presence of counterpropagating edge states with interlayer coupling.

引用

页数：5

共 35 条

[1] Spin-filtered edge states and quantum hall effect in graphene [J].