Large spontaneous emission factor of 0.1 in a microdisk injection laser

被引：41

作者：

Fujita, M ^{[1
]}

Ushigome, R ^{[1
]}

Baba, T ^{[1
]}

机构：

[1] Yokohama Natl Univ, Div Elect & Comp Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 05期

关键词：

GaInAsP; microcavity; microdisk; spontaneous emission control; spontaneous emission factor; whispering gallery mode;

D O I：

10.1109/68.920731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large spontaneous emission factor of 0.1 was evaluated in a 1.56-mum-GaInAsP microdisk injection laser operating under continuous-wave condition with a threshold current of 50 muA. Some clear evidence of the large spontaneous emission factor, i.e., superlinear light-current characteristics and nonclamped carrier-current characteristics, were observed. It was confirmed that the matching of the lasing wavelength to the spontaneous emission allowed larger spontaneous emission factor.

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收藏

页码：403 / 405

页数：3

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