Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films

被引：6

作者：

Saleh, R ^{[1
]}

Nickel, NH

机构：

[1] Univ Indonesia, Fak MIPA, Depok 16424, Indonesia

[2] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

SURFACE & COATINGS TECHNOLOGY | 2005年 / 198卷 / 1-3期

关键词：

Raman spectroscopy; laser crystallization; compensated polycrystalline silicon;

D O I：

10.1016/j.surfcoat.2004.10.128

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of dopant and the microstructure on hydrogen bonding in doped and compensated laser crystallized polycrystalline silicon (poly-Si) films were investigated using Raman backscattering spectrometry. With increasing boron and phosphorous concentration, the LOTO phonon line in doped as well as in compensated films shifts to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. Doping results also in significant changes of hydrogen bonding configurations. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：143 / 147

页数：5

共 18 条

[1] Laser crystallised poly-Si TFTs for AMLCDs [J].