Visualizing stress in silicon micro cantilevers using scanning confocal Raman spectroscopy

被引:13
作者
Bauer, M. [1 ,2 ]
Gigler, A. M. [1 ,2 ]
Richter, C. [3 ]
Stark, R. W. [1 ,2 ]
机构
[1] Univ Munich, Ctr Nanosci, D-80333 Munich, Germany
[2] Univ Munich, Dept Earth & Environm Sci, D-80333 Munich, Germany
[3] NanoWorld Serv GmbH, D-91058 Erlangen, Germany
关键词
silicon; stokes shift; stress; Raman spectroscopy; temperature dependence; local heating; micro structure;
D O I
10.1016/j.mee.2008.01.089
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the determination of surface stress in a resonantly oscillating silicon micro cantilever using confocal Raman spectroscopy. Focusing on the optical phonon line of silicon allows one to determine the lateral distribution of mechanical stress. However, the Raman shift caused by mechanical stress can be concealed by thermally induced Raman shifts and line-broadenings. Both effects are intrinsic to the micro Raman measurement which uses a strongly focused laser beam in a confocal microscope. In order to unravel the different contributions, we use a practical analytical method for the compensation based on reference measurements on a heated silicon wafer of the same crystal orientation. As an example, the structure of the micro cantilever was specially weakened by introducing a rectangular hole in the center of the lever. After compensation of the thermally induced shift, the true mechanical stress can be visualized as shown for a stress maximum of the cantilever driven at its second flexural eigenmode. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1443 / 1446
页数:4
相关论文
共 12 条
[1]   Raman thermometry of polysilicon microelectromechanical systems in the presence of an evolving stress [J].
Abel, Mark R. ;
Graham, Samuel ;
Serrano, Justin R. ;
Kearney, Sean P. ;
Phinney, Leslie M. .
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2007, 129 (03) :329-334
[2]   Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy [J].
Beechem, Thomas ;
Graham, Samuel ;
Kearney, Sean P. ;
Phinney, Leslie M. ;
Serrano, Justin R. .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2007, 78 (06)
[3]   RESONANCE RAMAN-SCATTERING IN SI AT ELEVATED-TEMPERATURES [J].
COMPAAN, A ;
TRODAHL, HJ .
PHYSICAL REVIEW B, 1984, 29 (02) :793-801
[4]  
DeWolf I, 1996, SEMICOND SCI TECH, V11, P139, DOI 10.1088/0268-1242/11/2/001
[5]   Ultrahigh time-resolution vibrational spectroscopy of shocked molecular solids [J].
Hambir, SA ;
Franken, J ;
Hare, DE ;
Chronister, EL ;
Baer, BJ ;
Dlott, DD .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2157-2166
[6]   COHERENT RAMAN MEASUREMENTS OF POLYMER THIN-FILM PRESSURE AND TEMPERATURE DURING PICOSECOND LASER-ABLATION [J].
HARE, DE ;
FRANKEN, J ;
DLOTT, DD .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) :5950-5960
[7]   TEMPERATURE DEPENDENCE OF RAMAN SCATTERING IN SILICON [J].
HART, TR ;
AGGARWAL, RL ;
LAX, B .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :638-&
[8]   Influence of local heating on micro-Raman spectroscopy of silicon [J].
Kouteva-Arguirova, S ;
Arguirov, T ;
Wolfframm, D ;
Reif, J .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) :4946-4949
[9]   TEMPERATURE-DEPENDENCE OF THE 1ST-ORDER RAMAN-SCATTERING BY PHONONS IN SI, GE, AND A-SN - ANHARMONIC EFFECTS [J].
MENENDEZ, J ;
CARDONA, M .
PHYSICAL REVIEW B, 1984, 29 (04) :2051-2059
[10]   Micro-raman measurement of bending stresses in micromachined silicon flexures [J].
Srikar, VI ;
Swan, AK ;
Ünlü, MS ;
Goldberg, BB ;
Spearing, SM .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2003, 12 (06) :779-787