Self- and interdiffusion in AlxGa1-xAs/GaAs isotope heterostructures

被引：41

作者：

Bracht, H ^{[1
]}

Haller, EE

Eberl, K

Cardona, M

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.123129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report self- and interdiffusion studies between 800 and 1160 degrees C in buried (AlGaAs)-Ga-71/(AlGaAs)-Ga-69/(GaAs)-Ga-71 and AlAs/(GaAs)-Ga-71 isotope heterostructures. Ga diffusion at (AlGaAs)-Ga-71-(AlGaAs)-Ga-69 interfaces was found to decrease with increasing Al content. Al-Ga interdiffusion at AlGaAs-GaAs and AlAs-GaAs interfaces reveals a concentration dependent interdiffusion coefficient. The temperature dependence of Ga and Al diffusion in GaAs and of Ga diffusion in AlGaAs is described by a single activation enthalpy in the range of 3.6+/-0.1 eV, but with different pre-exponential factors. The experimentally observed higher Al diffusion in GaAs compared to Ga self-diffusion as well as the decreasing Ga diffusion with increasing Al content is explained. (C) 1999 American Institute of Physics. [S0003-6951(99)04501-5].

引用

页码：49 / 51

页数：3

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