High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

被引：99

作者：

Szafranek, B. N. ^{[1
]}

Schall, D. ^{[1
]}

Otto, M. ^{[1
]}

Neumaier, D. ^{[1
,2
]}

Kurz, H. ^{[1
,2
]}

机构：

[1] AMO GmbH, Adv Microelect Ctr Aachen AMICA, Otto Blumenthal Str 25, D-52074 Aachen, Germany

[2] Rhein Westfal TH Aachen, Inst Semicond Elect, D-52074 Aachen, Germany

来源：

NANO LETTERS | 2011年 / 11卷 / 07期

关键词：

bilayer graphene; field-effect transistor; adsorbate doping; graphene devices; band gap; GAS; STATE;

D O I：

10.1021/nl200631m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and sensor applications. So far the operation of bilayer graphene-based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper, we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low-temperature measurements indicate that the increased on/off ratio is caused by the opening of a mobility gap.

引用

页码：2640 / 2643

页数：4