Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn = P and As)

被引：37

作者：

Kayanuma, Kentaro ^{[1
]}

Kawamura, Ryuto ^{[2
]}

Hiramatsu, Hidenori ^{[1
]}

Yanagi, Hiroshi ^{[2
]}

Hirano, Masahiro ^{[1
,2
]}

Kamiya, Toshio ^{[1
,2
]}

Hosono, Hideo ^{[1
,2
]}

机构：

[1] Japan Sci & Technol Agcy, ERATO SORST, Frontier Res Ctr, Tokyo Inst Technol,Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 17期

关键词：

layered oxypnictide; epitaxy; laser ablation; electrical properties and measurement;

D O I：

10.1016/j.tsf.2007.10.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

LaZnOPn (Pn=P and As) thin films were successfully grown on MgO (001) substrates with an epitaxial relationship of (001) LaZnOPn 11 (001) MgO and [110] LaZnOPn 11 [110] MgO. The electrical conductivity of undoped LaZnOP epitaxial film was so low, 3.1 x 10(-6) S/cm at room temperature, that reliable Seebeck and Hall measurement results were not obtained. On the other hand, the electrical conductivities of the Cu-doped LaZnOP and undoped LaZnOAs epitaxial films were 2.7 x 10(-2) and 2.0 x 10(-1) S/cm at room temperature, respectively. The Seebeck coefficients of both the epitaxial films were positive, indicating p-type semiconductors. The optical bandgaps of LaZnOP and LaZnOAs were estimated to be similar to 1.7 eV and similar to 1.5 eV, respectively. (C) 2007 Elsevier B.V. All rights reserved.

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页码：5800 / 5804

页数：5

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