Measurement of the band offsets between amorphous LaAlO3 and silicon

被引：158

作者：

Edge, LF ^{[1
]}

Schlom, DG

Chambers, SA

Cicerrella, E

Freeouf, JL

Holländer, B

Schubert, J

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Pacific NW Natl Lab, Fundamental Sci Directorate, Richland, WA 99352 USA

[3] Oregon Hlth & Sci Univ, Dept Elect & Comp Engn, Beaverton, OR 97006 USA

[4] Forschungszentrum Julich, Inst Schichten & Grenzflachen ISGI IT, D-52425 Julich, Germany

[5] Forschungszentrum Julich, Ctr Nanoelect Syst Informat, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.1644055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from x-ray photoelectron spectroscopy measurements. These films, which are free of interfacial SiO2, were made by molecular-beam deposition. The band line-up is type I with measured band offsets of 1.8+/-0.2 eV for electrons and 3.2+/-0.1 eV for holes. The band offsets are independent of the doping concentration in the silicon substrate as well as the amorphous LaAlO3 film thickness. These amorphous LaAlO3 films have a bandgap of 6.2+/-0.1 eV. (C) 2004 American Institute of Physics.

引用

页码：726 / 728

页数：3

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