Sputter deposition of high resistivity boron carbide

被引：20

作者：

Ahmad, AA

Ianno, NJ ^{[1
]}

Hwang, SD

Dowben, PA

机构：

[1] Univ Nebraska, Ctr Microelect & Opt Mat Res, Lincoln, NE 68588 USA

[2] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[3] Univ Nebraska, Ctr Mat Res & Anal, Lincoln, NE 68588 USA

[4] Univ Nebraska, Dept Phys, Lincoln, NE 68588 USA

来源：

THIN SOLID FILMS | 1998年 / 335卷 / 1-2期

关键词：

boron carbide; deposition process; sputtering;

D O I：

10.1016/S0040-6090(98)00876-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have succeeded in the rf magnetron sputter deposition of high resistivity boron carbide (B1-xCx). This has been accomplished by the sputter depositing the boron carbide from a methane saturated boron carbide target. We show that the composition and optical band gap of the sputter deposited material are functions of the applied rf power. Furthermore, boron carbide/silicon heterojunction diodes fabricated via sputtering compare favorably with those fabricated from borane cage molecule sources using plasma enhanced chemical vapor deposition (PECVD). (C) 1998 Elsevier Science S.A, All rights reserved.

引用

页码：174 / 177

页数：4

共 28 条

[1]

AHAMD A, 1996, THESIS U NEBRASKA LI

[2]

Aselage T. L., 1987, MATER RES SOC S P, V97, P27

[3]

ASELAGE TL, 1991, AIP CONF PROC, V231, P177, DOI 10.1063/1.40890

[4] IR ABSORPTION OF AMORPHOUS BORON FILMS CONTAINING CARBON AND HYDROGEN [J].