WO3 pillar-type and helical-type thin film structures to be used in microbatteries

被引:14
作者
Figueroa, R.
Cruz, Tersio G. S.
Gorenstein, A.
机构
[1] Univ Estadual Campinas, Dept Appl Phys, BR-13083970 Campinas, SP, Brazil
[2] Univ Estadual Campinas, CESET, Telecommun Technol Div, BR-13484370 Limeira, SP, Brazil
关键词
tungsten oxide; reactive sputtering; thin films; microbatteries;
D O I
10.1016/j.jpowsour.2007.05.080
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the present study WO3 thin films were deposited by sputtering onto ITO glass, W/ITO and Si substrates by using the glancing angle deposition (GLAD) technique, with the objective of applying these materials in electrochemical intercalation devices. The thin films microstructure and electrochemical behavior were determined through scanning electron microscopy (SEM) and cycling at constant current with potential limitation. By mainly adjusting the substrate holder speed rotation, pillar-type and helical-type structures were obtained under high and low speed rotation levels. respectively. The electrochemical results showed that the best charge capacity performance was obtained for the WO3/W/ITO films with pillar-type structures, which are more porous. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:422 / 427
页数:6
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