Effects of glass addition on microwave dielectric properties of Zn0.95Mg0.05TiO3+0.25TiO2 ceramics

被引:28
作者
Lee, YC [1 ]
Lee, WH
机构
[1] Elect Ceram Res Ctr, Kaohsiung 811, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4A期
关键词
ZMT' (Zn0.95Mg0.05TiO3+0.25TO(2)); ZnBO-ZMT' (Zn0.95Mg0.05TiO3+0.25TiO(2)+1 wt% 3ZnO-B2O3); ZnBO; (3ZnO-B2O3); dielectric resonator; quality factor;
D O I
10.1143/JJAP.44.1838
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of Bi2O3 addition on the microwave dielectric properties and the microstructures of Zn0.95Mg0.05TiO3 + 0.25TiO(2) with 1 wt% 3ZnO-B2O3 (ZnBO-ZMT') ceramics prepared by conventional solid-state routes have been investigated. In a preliminary study, it was shown that ZnBO-ZMT' ceramics can be sintered to a theoretical density higher than 95% at 900 degrees C. In this study, the effects of Bi2O3 additions of up to 10 wt% on the sintering characteristics of the ZnBO-ZMT' ceramics was investigated at the sintering temperatures ranging from 860 to 960 degrees C. Sintered ceramic samples were characterized by X-ray diffraction and scanning electron microscopy (SEM). It was found that as the content of Bi2O3 increases, the density of the sintered ceramics increases, and the sintering temperature can be lowered to 880 degrees C by adding 5 wt% Bi2O3. The ZnBO-ZMT' ceramic with 5 wt% Bi2O3 addition sintered at 880 degrees C exhibits the optimum dielectric properties: Q x f = 4000 GHz, epsilon(r) = 24.6, and tau(f) = -14ppm/degrees C. Unlike the ZnBO-ZMT' ceramic without Bi2O3 addition sintered at above 920 degrees C, the ceramics with Bi2O3 additions show no Zn2TiO4 existence at 960 degrees C sintering. It is therefore demonstrated that the addition of Bi2O3 can suppress the formation of Zn2TiO4 in ZnBO-ZMT' ceramics.
引用
收藏
页码:1838 / 1843
页数:6
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