Partial reduction of Si(IV) in SiO2 thin film by deposited metal particles:: an XPS study

被引：17

作者：

Komiyama, M ^{[1
]}

Shimaguchi, T ^{[1
]}

机构：

[1] Okazaki Natl Res Inst, Inst Mol Sci, Okazaki, Aichi 4448585, Japan

来源：

SURFACE AND INTERFACE ANALYSIS | 2001年 / 32卷 / 01期

关键词：

x-ray photoelectron spectroscopy; surface electronic phenomena; platinum; palladium; silver; gold; silicon oxide; metal-insulator interface;

D O I：

10.1002/sia.1034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Metal-support interactions in systems of dispersed metals supported on thin-film silica surfaces were examined by x-ray photoelectron spectroscopy. Four metal-silica systems-Pt-, Pd-, Ag- and Au-SiO2-all indicated the formation of partially reduced Si(IV) species by the metal deposition. The extent of the reduction varied little with the kind or amount of deposited metal species. On the other hand, the amount of this newly formed Si(IV-delta) indicated a strong metal species dependence. Copyright (C) 2001 John Wiley & Sons, Ltd.

引用

页码：189 / 192

页数：4

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