Characterization of PZT capacitors with SrRuO3 electrodes

被引：23

作者：

Cross, JS ^{[1
]}

Fujiki, M ^{[1
]}

Tsukada, M ^{[1
]}

Kotaka, Y ^{[1
]}

Goto, Y ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Mat & Mat Engn Lab, Atsugi, Kanagawa 2430197, Japan

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

FeCap; SrRuO3; PZT; interface; CSD; sputter;

D O I：

10.1080/10584589808202069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pb(Zr,Ti)O-3 [PZT] capacitors were prepared by CSD on sputtered electrodes of SrRuO3(SRO)/Pt on SiO2/Si wafers. The SRO/Pt bottom electrodes were deposited using two different conditions: (1) at 600 degrees C in-situ (abbreviated HT), and (2) at low temperature followed by a post-deposition anneal at 600 degrees C (abbreviated LTA). The PZT orientation and switching pulse polarization, i.e. HT-SRO (43 mu C cm(-2)) and LTA-SRO (32 mu C cm-(2)) were strongly dependent on the bottom electrodes. Yet neither capacitor showed polarization loss resulting from switching 10(8) times with +/-5 V pulses. These results indicate that the PZT ferroelectric properties are greatly influenced by the SRO bottom electrode processing conditions.

引用

页码：263 / +

页数：10

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