Characterization of a sol-gel derived Pb(Zr, Ti)O-3 thin-film capacitor with polycrystalline SrRuO3 electrodes

被引：18

作者：

Aoki, K ^{[1
]}

Murayama, I ^{[1
]}

Fukuda, Y ^{[1
]}

Nishimura, A ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,MEM RES & DEV CTR,DALLAS,TX 75243

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 6A期

关键词：

SrRuO3; Pb(Zr; Ti)O-3; remanent polarization; fatigue property; sol-gel; reactive sputtering; polycrystalline;

D O I：

10.1143/JJAP.36.L690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of a sol-gel derived Pb(Zr, TiO)(3) thin-film capacitor with polycrystalline SrRuO3 electrodes deposited by reactive sputtering were evaluated. A single perovskite phase Pb(Zr, Ti)O-3 film with columnar grain structure was formed on SrRuO3 substrates since nucleation of Pb(Zr, Ti)O-3 took place at the interface with SrRuO3. A Pb(Zr Ti)O-3 capacitor with top and bottom SrRuO3 electrodes showed excellent electrical properties. Leakage current densities were around 1 x 10(-7) A/cm(2) at +/-5.0 V. The capacitor exhibited good reversibility at an applied voltage of 3.0 V. Remanent polarization density for 3.0 V was 14.3 mu c/cm(2). Degradation of remanent polarization density was not observed up to switching cycles of 1 x 10(10). Polycrystalline SrRuO3 thin film is expected to be a good candidate for the electrode material of Pb(Zr, Ti)O-3 capacitors.

引用

页码：L690 / L692

页数：3

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