ELECTRICAL COMPARISON OF SOL-GEL DERIVED LEAD-ZIRCONATE-TITANATE CAPACITORS WITH IR AND PT ELECTRODES

被引:24
作者
AOKI, K
FUKUDA, Y
NUMATA, K
NISHIMURA, A
机构
[1] ULSI Technology Center, Texas Instruments Japan Limited, Inashiki, 300-04
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期
关键词
IRIDIUM; PLATINUM; PZT; SOL-GEL DEPOSITION; ENDURANCE;
D O I
10.1143/JJAP.34.5250
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical properties of sol-gel-derived Ir/lead-zirconate-titanate (PZT)/Ir and Pt/PZT/Pt capacitors were carefully investigated. PZTs with columnar structures were well crystallized on both Ir and Pt substrates. 250-nm-thick PZT films deposited on Ir and Pt showed random and [111]-preferred orientations. respectively. The Ir/PZT/Ir capacitor showed large remanent polarization density of 20.7 mu C/cm(2) at applied voltage of 2.5 V even though this PZT is randomly oriented. This value is almost equal to that of [111]-oriented film prepared on Pt. Furthermore, coercive field of the Ir/PZT/Ir capacitor is much lower than that of the Pt/PZT/Pt one, For Endurance property for switching, Pr of Pt/PZT/Pt capacitor was degraded to 45% of the initial value by switching of 1 x 10(5) cycles. On the other hand, that of Ir/PZT/Ir capacitor was decreased to 45% by 1 x 10(7) switching cycles. Degradation of remanent polarization density by switching was reduced considerably by using Ir electrodes.
引用
收藏
页码:5250 / 5253
页数:4
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