Spin lifetime of (In,Ga)As/GaAs(110) quantum wells

被引：15

作者：

Schreiber, L. ^{[1
]}

Duda, D.

Beschoten, B.

Guentherodt, G.

Schoenherr, H.-P.

Herfort, J.

机构：

[1] Univ Aachen, Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany

[2] Virtual Inst Spin Elect ViSel, D-52056 Aachen, Germany

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 08期

关键词：

GAAS; 110; SURFACE; GROWTH-MECHANISM; GAAS(110); RELAXATION; MIGRATION; DYNAMICS; ENERGY;

D O I：

10.1002/pssb.200775626

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Undoped and strained (In,Ga)As/GaAs quantum wells of different width and height were grown on GaAs(110) by molecular beam epitaxy and characterized by photoluminescence and atomic force microscopy. The effect of geometry and interface quality on the out-of-plane electron spin lifetime is investigated for a wide temperature range by both time-resolved Faraday rotation and time-resolved transmission. Due to the suppression of the D'yakonov Perel' spin relaxation mechanism, the electron spin lifetime of the (110) quantum well is peaked at a temperature, which depends on In concentration, whereas the quantum well width, interface roughness and compositional fluctuations in the quantum well determine the maximum value of the spin lifetime. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2960 / 2970

页数：11

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