(In,Ga)As/GaAs quantum wells on GaAs(110)

被引：6

作者：

Hey, R ^{[1
]}

Trampert, A ^{[1
]}

Santos, P ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期

关键词：

D O I：

10.1002/pssc.200564140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum wells consisting of (In,Ga)As/GaAs and InAs/GaAs were grown on GaAs(110) by conventional molecular beam epitaxy as well as by migration enhanced epitaxy and studied by low-temperature photoluminescence, atomic force microscopy and transmission electron microscopy. Increasing the In mole fraction or the well thickness degrades the structural perfection more dramatically in (110)-oriented structures than in (001)-oriented ones while post-growth annealing improves the optical properties. The quality of (In,Ga)As wells is remarkably improved by migration enhanced epitaxy. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：651 / +

页数：2

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