Effect of calcination on the crystallinity of sputtered TiO2 thin films as studied by Raman scattering

被引：9

作者：

Kartmagaran, B ^{[1
]}

Mangalaraj, D ^{[1
]}

Kim, K ^{[1
]}

Hong, BY ^{[1
]}

Roh, Y ^{[1
]}

Park, CS ^{[1
]}

Yi, JS ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2005年 / 40卷 / 03期

关键词：

TiO2; thin films; sputtering; Raman;

D O I：

10.1002/crat.200410329

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Titanium dioxide films have been deposited using DC magnetron sputtering technique onto silicon substrates at an ambient temperature and at an oxygen partial pressure of 7x10(-5) mbar and sputtering pressure (Ar + O-2) of 1x10(-3) mbar. The deposited films were calcinated at 673 and 773 K. The composition of the films as analyzed using Auger Electron Spectroscopy (AES) revealed the stoichiometry with an O and Ti ratio of 2.08. The influence of post-deposition calcination on the Raman scattering of the films was studied. The existence of Raman active modes A(1g), B-1g, and E-g corresponding to the Raman shifts are reported in this paper. The improvement of crystallinity of the TiO2 films as shown by the Raman scattering studies has also been reported. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：222 / 225

页数：4

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