The effects of oxygen content on electrical and optical properties of indium tin oxide films fabricated by reactive sputtering

被引：24

作者：

Honda, S

Watamori, M

Oura, K

机构：

[1] Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565

来源：

THIN SOLID FILMS | 1996年 / 281卷

关键词：

electrical properties and measurements; optical properties; oxides; Rutherford backscattering spectroscopy;

D O I：

10.1016/0040-6090(96)08614-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the depth profile of the oxygen content of indium tin oxide (ITO) films fabricated by reactive sputtering. The oxygen content was determined by means of O-16(alpha,alpha)O-16 resonant backscattering. The effect of the oxygen partial pressure of reactive gas on the oxygen content of the films was investigated. From the depth profile of oxygen, it was found that the oxygen compositions of the films, especially in the surface region, changed with the oxygen partial pressure. Also it was found that the electrical and optical properties of the ITO films changed with the oxygen partial pressure. The correlation between the oxygen content and the electrical and optical properties is discussed.

引用

页码：206 / 208

页数：3

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