Doped silicene: Evidence of a wide stability range

被引：63

作者：

Cheng, Y. C. ^{[1
]}

Zhu, Z. Y. ^{[1
]}

Schwingenschloegl, U. ^{[1
]}

机构：

[1] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia

来源：

EPL | 2011年 / 95卷 / 01期

关键词：

GRAPHENE; SURFACE; PHONONS;

D O I：

10.1209/0295-5075/95/17005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E-2g-Gamma and A'-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Gamma and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright (C) EPLA, 2011

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