Enhanced CW performance of the interband cascade laser using improved device fabrication

被引：14

作者：

Bradshaw, JL ^{[1
]}

Pham, JT ^{[1
]}

Yang, RQ ^{[1
]}

Bruno, JD ^{[1
]}

Wortman, DE ^{[1
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2001年 / 7卷 / 02期

关键词：

diode lasers; mid-infrared; quantum-well lasers; semiconductor superlattices; thermal factors;

D O I：

10.1109/2944.954117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous-wave (CW) operation of a mid-infrared type-II interband cascade (IQ laser has been demonstrated at temperatures up to 142 K by improving device processing and fabrication. Also, the IC laser exhibited record-high wall-plug efficiencies (similar to 18 % at 60 K) with considerable CW output powers. An analysis of the thermal resistance partially explains the still low maximum CW operating temperature and suggests further potential for improvement with continued development of fabrication/packaging techniques.

引用

页码：102 / 105

页数：4

共 28 条

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